• image of 记忆>IS61WV6416EEBLL-8TLI
  • image of 记忆>IS61WV6416EEBLL-8TLI
IS61WV6416EEBLL-8TLI
1Mb,High-Speed/Low Power,Async w
-
散装
135
image of 记忆>IS61WV6416EEBLL-8TLI
image of 记忆>IS61WV6416EEBLL-8TLI
IS61WV6416EEBLL-8TLI
IS61WV6416EEBLL-8TLI
记忆
ISSI (Integrated Silicon Solution, Inc.)
1Mb,High-Speed/Low Power,Async w
-
散装
0
1
产品参数
产品说明
PDF(1)
类型描述
制造商ISSI (Integrated Silicon Solution, Inc.)
系列-
包装散装
产品状态ACTIVE
包装/箱44-TSOP (0.400", 10.16mm Width)
安装类型Surface Mount
内存大小1Mbit
内存类型Volatile
工作温度-40°C ~ 85°C (TA)
电压 - 电源2.4V ~ 3.6V
技术SRAM - Asynchronous
内存格式SRAM
供应商设备包44-TSOP II
写入周期时间 - 字、页8ns
内存接口Parallel
存取时间8 ns
记忆组织64K x 16
DigiKey 可编程Not Verified

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