• image of 记忆>IS61WV6416EEBLL-8TLI-TR
  • image of 记忆>IS61WV6416EEBLL-8TLI-TR
IS61WV6416EEBLL-8TLI-TR
1Mb,High-Speed/Low Power,Async w
-
卷带式 (TR)
1000
image of 记忆>IS61WV6416EEBLL-8TLI-TR
image of 记忆>IS61WV6416EEBLL-8TLI-TR
IS61WV6416EEBLL-8TLI-TR
IS61WV6416EEBLL-8TLI-TR
记忆
ISSI (Integrated Silicon Solution, Inc.)
1Mb,High-Speed/Low Power,Async w
-
卷带式 (TR)
0
1
产品参数
产品说明
PDF(1)
类型描述
制造商ISSI (Integrated Silicon Solution, Inc.)
系列-
包装卷带式 (TR)
产品状态ACTIVE
包装/箱44-TSOP (0.400", 10.16mm Width)
安装类型Surface Mount
内存大小1Mbit
内存类型Volatile
工作温度-40°C ~ 85°C (TA)
电压 - 电源2.4V ~ 3.6V
技术SRAM - Asynchronous
内存格式SRAM
供应商设备包44-TSOP II
写入周期时间 - 字、页8ns
内存接口Parallel
存取时间8 ns
记忆组织64K x 16
DigiKey 可编程Not Verified

长期收购IC芯片、二三极管、电子物料、工厂库存、代理库存、工厂呆滞料,专业团队核算BOM表清单,总单打包。国内外均可交货

captcha

+86-13288788831

点击这里给我发消息
0