• image of Single FETs, MOSFETs>XP10NA011J
  • image of Single FETs, MOSFETs>XP10NA011J
XP10NA011J
MOSFET N-CH 100V 48.5A TO251S
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Tube
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image of Single FETs, MOSFETs>XP10NA011J
image of Single FETs, MOSFETs>XP10NA011J
XP10NA011J
XP10NA011J
Single FETs, MOSFETs
YAGEO XSEMI
MOSFET N-CH 100V 48.5A TO251S
-
Tube
1000
1
Product parameters
Product Description
PDF(1)
TYPEDESCRIPTION
MfrYAGEO XSEMI
SeriesXS10NA011
PackageTube
Product StatusACTIVE
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C48.5A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 30A, 10V
Power Dissipation (Max)1.13W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-251S
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2288 pF @ 80 V

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