| TYPE | DESCRIPTION |
| Mfr | Transphorm |
| Series | - |
| Package | Bulk |
| Product Status | OBSOLETE |
| Package / Case | Module |
| Mounting Type | Through Hole |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| Power - Max | 470W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
| Supplier Device Package | Module |
Long term acquisition of IC chips, diodes, electronic materials, factory inventory, agent inventory, factory obsolete materials, professional team to calculate BOM list, and package total orders. Delivery is available both domestically and internationally
