• image of Single FETs, MOSFETs>TP65H150G4LSG
  • image of Single FETs, MOSFETs>TP65H150G4LSG
TP65H150G4LSG
GAN FET N-CH 650V PQFN
-
Tray
3000
image of Single FETs, MOSFETs>TP65H150G4LSG
image of Single FETs, MOSFETs>TP65H150G4LSG
TP65H150G4LSG
TP65H150G4LSG
Single FETs, MOSFETs
Transphorm
GAN FET N-CH 650V PQFN
-
Tray
2834
Product parameters
Product Description
TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTray
Product StatusACTIVE
Package / Case3-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Rds On (Max) @ Id, Vgs180mOhm @ 8.5A, 10V
Power Dissipation (Max)52W (Tc)
Vgs(th) (Max) @ Id4.8V @ 500µA
Supplier Device Package3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds598 pF @ 400 V

Long term acquisition of IC chips, diodes, electronic materials, factory inventory, agent inventory, factory obsolete materials, professional team to calculate BOM list, and package total orders. Delivery is available both domestically and internationally

 

captcha

+86-13288788831

点击这里给我发消息
0