• image of Memory>TC58BYG2S0HBAI6
  • image of Memory>TC58BYG2S0HBAI6
TC58BYG2S0HBAI6
IC FLASH 4GBIT PARALLEL 67VFBGA
-
Tray
338
image of Memory>TC58BYG2S0HBAI6
image of Memory>TC58BYG2S0HBAI6
TC58BYG2S0HBAI6
TC58BYG2S0HBAI6
Memory
Toshiba Memory America, Inc. (Kioxia America, Inc.)
IC FLASH 4GBIT PARALLEL 67VFBGA
-
Tray
297
1
Product parameters
Product Description
TYPEDESCRIPTION
MfrToshiba Memory America, Inc. (Kioxia America, Inc.)
SeriesBenand™
PackageTray
Product StatusACTIVE
Package / Case67-VFBGA
Mounting TypeSurface Mount
Memory Size4Gbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)
Voltage - Supply1.7V ~ 1.95V
TechnologyFLASH - NAND (SLC)
Memory FormatFLASH
Supplier Device Package67-VFBGA (6.5x8)
Write Cycle Time - Word, Page25ns
Memory InterfaceParallel
Access Time25 ns
Memory Organization512M x 8
DigiKey ProgrammableNot Verified

Long term acquisition of IC chips, diodes, electronic materials, factory inventory, agent inventory, factory obsolete materials, professional team to calculate BOM list, and package total orders. Delivery is available both domestically and internationally

 

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