• image of Bipolar RF Transistors>NE68039R-T1
  • image of Bipolar RF Transistors>NE68039R-T1
NE68039R-T1
RF TRANS NPN 10V 10GHZ SOT143R
-
Cut Tape (CT)
3000
image of Bipolar RF Transistors>NE68039R-T1
image of Bipolar RF Transistors>NE68039R-T1
NE68039R-T1
NE68039R-T1
Bipolar RF Transistors
CEL (California Eastern Laboratories)
RF TRANS NPN 10V 10GHZ SOT143R
-
Cut Tape (CT)
667
Product parameters
Product Description
PDF(1)
TYPEDESCRIPTION
MfrCEL (California Eastern Laboratories)
Series-
PackageCut Tape (CT)
Product StatusOBSOLETE
Package / CaseSOT-143R
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain6.5dB ~ 11dB
Power - Max200mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 6V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
Supplier Device PackageSOT-143R

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