• image of Single FETs, MOSFETs>ICE60N199
  • image of Single FETs, MOSFETs>ICE60N199
ICE60N199
Superjunction MOSFET
-
Tube
50
image of Single FETs, MOSFETs>ICE60N199
image of Single FETs, MOSFETs>ICE60N199
ICE60N199
ICE60N199
Single FETs, MOSFETs
IceMOS Technology
Superjunction MOSFET
-
Tube
100
Product parameters
Product Description
PDF(1)
TYPEDESCRIPTION
MfrIceMOS Technology
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs199mOhm @ 10A, 10V
Power Dissipation (Max)180W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-220
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1890 pF @ 25 V

Long term acquisition of IC chips, diodes, electronic materials, factory inventory, agent inventory, factory obsolete materials, professional team to calculate BOM list, and package total orders. Delivery is available both domestically and internationally

 

captcha

+86-13288788831

点击这里给我发消息
0