• image of Single Diodes>G3S06504A
  • image of Single Diodes>G3S06504A
G3S06504A
DIODE SIC 650V 11.5A TO220AC
-
Tape & Box (TB)
30
image of Single Diodes>G3S06504A
image of Single Diodes>G3S06504A
G3S06504A
G3S06504A
Single Diodes
Global Power Technology
DIODE SIC 650V 11.5A TO220AC
-
Tape & Box (TB)
25
Product parameters
Product Description
TYPEDESCRIPTION
MfrGlobal Power Technology
Series-
PackageTape & Box (TB)
Product StatusACTIVE
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F181pF @ 0V, 1MHz
Current - Average Rectified (Io)11.5A
Supplier Device PackageTO-220AC
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 4 A
Current - Reverse Leakage @ Vr50 µA @ 650 V

Long term acquisition of IC chips, diodes, electronic materials, factory inventory, agent inventory, factory obsolete materials, professional team to calculate BOM list, and package total orders. Delivery is available both domestically and internationally

 

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