| TYPE | DESCRIPTION |
| Mfr | GeneSiC Semiconductor |
| Series | G3R™ |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 35A, 15V |
| Power Dissipation (Max) | 333W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2929 pF @ 800 V |
Long term acquisition of IC chips, diodes, electronic materials, factory inventory, agent inventory, factory obsolete materials, professional team to calculate BOM list, and package total orders. Delivery is available both domestically and internationally
