• image of Single FETs, MOSFETs>G35N02K
  • image of Single FETs, MOSFETs>G35N02K
G35N02K
N20V,RD(MAX)<13M@4.5V,RD(MAX)<18
-
Tape & Reel (TR)
2500
image of Single FETs, MOSFETs>G35N02K
image of Single FETs, MOSFETs>G35N02K
G35N02K
G35N02K
Single FETs, MOSFETs
Goford Semiconductor
N20V,RD(MAX)<13M@4.5V,RD(MAX)<18
-
Tape & Reel (TR)
217
1
Product parameters
Product Description
PDF(1)
TYPEDESCRIPTION
MfrGoford Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs13mOhm @ 20A, 4.5V
Power Dissipation (Max)40W (Tc)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device PackageTO-252
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 10 V

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