• image of Single FETs, MOSFETs>G01N20LE
  • image of Single FETs, MOSFETs>G01N20LE
G01N20LE
N200V,RD(MAX)<850M@10V,RD(MAX)<9
-
Tape & Reel (TR)
3000
image of Single FETs, MOSFETs>G01N20LE
image of Single FETs, MOSFETs>G01N20LE
G01N20LE
G01N20LE
Single FETs, MOSFETs
Goford Semiconductor
N200V,RD(MAX)<850M@10V,RD(MAX)<9
-
Tape & Reel (TR)
826
1
Product parameters
Product Description
PDF(1)
TYPEDESCRIPTION
MfrGoford Semiconductor
SeriesTrenchFET®
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Rds On (Max) @ Id, Vgs700mOhm @ 1A, 10V
Power Dissipation (Max)1.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 25 V

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