• image of Memory>BY25D16ASSJG(R)
  • image of Memory>BY25D16ASSJG(R)
BY25D16ASSJG(R)
16 MBIT, 3.0V (2.7V TO 3.6V), -4
-
Tape & Reel (TR)
4000
image of Memory>BY25D16ASSJG(R)
image of Memory>BY25D16ASSJG(R)
BY25D16ASSJG(R)
BY25D16ASSJG(R)
Memory
BYTe Semiconductor
16 MBIT, 3.0V (2.7V TO 3.6V), -4
-
Tape & Reel (TR)
0
1
Product parameters
Product Description
PDF(1)
TYPEDESCRIPTION
MfrBYTe Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-SOIC (0.209", 5.30mm Width)
Mounting TypeSurface Mount
Memory Size16Mbit
Memory TypeNon-Volatile
Operating Temperature-40°C ~ 105°C (TA)
Voltage - Supply2.7V ~ 3.6V
TechnologyFLASH - NOR (SLC)
Clock Frequency108 MHz
Memory FormatFLASH
Supplier Device Package8-SOP
Write Cycle Time - Word, Page2.4ms
Memory InterfaceSPI - Dual I/O
Access Time7 ns
Memory Organization2M x 8

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