• image of Bipolar RF Transistors>BFU550WX
  • image of Bipolar RF Transistors>BFU550WX
BFU550WX
BFU550W - NPN WIDEBAND SILICON R
-
Bulk
821
image of Bipolar RF Transistors>BFU550WX
image of Bipolar RF Transistors>BFU550WX
BFU550WX
BFU550WX
Bipolar RF Transistors
NXP Semiconductors
BFU550W - NPN WIDEBAND SILICON R
-
Bulk
7039
Product parameters
Product Description
PDF(1)
TYPEDESCRIPTION
MfrNXP Semiconductors
Series-
PackageBulk
Product StatusOBSOLETE
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-40°C ~ 150°C (TJ)
Gain18dB
Power - Max450mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 15mA, 8V
Frequency - Transition11GHz
Noise Figure (dB Typ @ f)1.3dB @ 1.8GHz
Supplier Device PackageSC-70

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