• image of Bipolar Transistor Arrays>BC817RA147
  • image of Bipolar Transistor Arrays>BC817RA147
BC817RA147
BC817RA - SMALL SIGNAL BIPOLAR T
-
Bulk
7036
image of Bipolar Transistor Arrays>BC817RA147
image of Bipolar Transistor Arrays>BC817RA147
BC817RA147
BC817RA147
Bipolar Transistor Arrays
NXP Semiconductors
BC817RA - SMALL SIGNAL BIPOLAR T
-
Bulk
10000
Product parameters
Product Description
PDF(1)
TYPEDESCRIPTION
MfrNXP Semiconductors
Series-
PackageBulk
Product StatusACTIVE
Package / Case6-XFDFN Exposed Pad
Mounting TypeSurface Mount
Transistor Type2 NPN
Operating Temperature150°C (TJ)
Power - Max500mW
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)45V
Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA, 1V
Frequency - Transition100MHz
Supplier Device PackageDFN1412-6
GradeAutomotive
QualificationAEC-Q101

Long term acquisition of IC chips, diodes, electronic materials, factory inventory, agent inventory, factory obsolete materials, professional team to calculate BOM list, and package total orders. Delivery is available both domestically and internationally

 

captcha

+86-13288788831

点击这里给我发消息
0