• image of Bipolar RF Transistors>2SC2839E-SPA-AC
  • image of Bipolar RF Transistors>2SC2839E-SPA-AC
2SC2839E-SPA-AC
NPN EPITAXIAL PLANAR SILICON
-
Bulk
6662
image of Bipolar RF Transistors>2SC2839E-SPA-AC
image of Bipolar RF Transistors>2SC2839E-SPA-AC
2SC2839E-SPA-AC
2SC2839E-SPA-AC
Bipolar RF Transistors
Sanyo Semiconductor/onsemi
NPN EPITAXIAL PLANAR SILICON
-
Bulk
11700
Product parameters
Product Description
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageBulk
Product StatusACTIVE
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypeNPN
Gain25dB
Power - Max150mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)20V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 1mA, 6V
Frequency - Transition320MHz
Noise Figure (dB Typ @ f)3dB @ 100MHz
Supplier Device Package3-SPA

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